Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO₂as gate insulator

Keyphrases

• Sensing Characteristics 100%
• Hydrogen Sensor 100%
• Metal-insulator 100%
• Gate Insulator 100%
• Silicon Carbide Schottky Barrier Diode 100%
• Barrier Height 66%
• Hydrogen Exposure 66%
• Insulator Thickness 66%
• Computer Control 33%
• Measurement System 33%
• Temperature Concentration 33%
• Hydrogen Concentration 33%
• RF Sputtering 33%
• Oxide Layer 33%
• High-k Dielectric 33%
• Hafnium Oxide 33%
• Trapped Charge 33%
• Height Reduction 33%
• Thick Oxide 33%
• Hydrogen Sensing Property 33%

Engineering

• Barrier Height 100%
• Experimental Result 50%
• Measurement System 50%
• Oxide Layer 50%
• Sensing Property 50%
• Dielectrics 50%

Material Science

• Silicon Carbide 100%
• Schottky Diode 100%
• Hafnium 50%
• Oxide Compound 50%
• Dielectric Material 50%