Improved performance of ZnO light-emitting devices by introducing a hole-injection layer

Ying Jie Lu, Hong Fei Li, Chong Xin Shan, Bing Hui Li, De Zhen Shen, Li Gong Zhang, Siu Fung Yu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)


ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 ìW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.
Original languageEnglish
Pages (from-to)17524-17531
Number of pages8
JournalOptics Express
Issue number14
Publication statusPublished - 1 Jan 2014

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this