Improved performance of ZnO light-emitting devices by introducing a hole-injection layer

Ying Jie Lu; Hong Fei Li; Chong Xin Shan; Bing Hui Li; De Zhen Shen; Li Gong Zhang; Siu Fung Yu

doi:10.1364/OE.22.017524

Improved performance of ZnO light-emitting devices by introducing a hole-injection layer

Ying Jie Lu, Hong Fei Li, Chong Xin Shan, Bing Hui Li, De Zhen Shen, Li Gong Zhang, Siu Fung Yu

Research output: Journal article publication › Journal article › Academic research › peer-review

14 Citations (Scopus)

Abstract

ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 ìW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.

Original language	English
Pages (from-to)	17524-17531
Number of pages	8
Journal	Optics Express
Volume	22
Issue number	14
DOIs	https://doi.org/10.1364/OE.22.017524
Publication status	Published - 1 Jan 2014

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.22.017524

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title = "Improved performance of ZnO light-emitting devices by introducing a hole-injection layer",

abstract = "ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 {\`i}W when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.",

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AU - Lu, Ying Jie

AU - Li, Hong Fei

AU - Shan, Chong Xin

AU - Li, Bing Hui

AU - Shen, De Zhen

AU - Zhang, Li Gong

AU - Yu, Siu Fung

PY - 2014/1/1

Y1 - 2014/1/1

N2 - ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 ìW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.

AB - ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 ìW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.

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JF - Optics Express

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ER -

Improved performance of ZnO light-emitting devices by introducing a hole-injection layer

Abstract

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