Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric

Y. X. Ma, W. M. Tang, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm2/V\cdot s and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538662342
DOIs
Publication statusPublished - 9 Oct 2018
Event2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China
Duration: 6 Jun 20188 Jun 2018

Publication series

Name2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/TerritoryChina
CityShenzhen
Period6/06/188/06/18

Keywords

  • high-k
  • NdHfON dielectric
  • Organic thin-film transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this