@inproceedings{029e9757c4ef4593a9fcff9a00b89abd,
title = "Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric",
abstract = "Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm2/V\cdot s and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device.",
keywords = "high-k, NdHfON dielectric, Organic thin-film transistor",
author = "Ma, {Y. X.} and Tang, {W. M.} and Lai, {P. T.}",
year = "2018",
month = oct,
day = "9",
doi = "10.1109/EDSSC.2018.8487159",
language = "English",
series = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",
note = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 ; Conference date: 06-06-2018 Through 08-06-2018",
}