Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric

Y. X. Ma; L. N. Liu; Wing Man Tang; P. T. Lai

doi:10.1109/EDSSC.2017.8355965

Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric

Y. X. Ma, L. N. Liu, Wing Man Tang, P. T. Lai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

2 Citations (Scopus)

Abstract

Pentacene organic thin-film transistors (OTFTs) with high-k NdON gate dielectric incorporating different Ti contents are fabricated and their physical and electrical characteristics are studied. With appropriate Ti content, the OTFT with NdTiON as gate dielectric can achieve improved performance, e.g. a carrier mobility of 0.80 cm2/V·s, a small threshold voltage of -1.25 V, and a small sub-threshold swing of 0.13 V/dec. The AFM results of the pentacene layer and the dielectric layer reveal that incorporating Ti into NdON can obtain a smoother dielectric surface, which should be due to the suppressed hygroscopicity of Nd oxide caused by the Ti incorporation. Both the smoother dielectric surface and thus larger pentacene grains grown are responsible for the improved carrier mobility of the device.

Original language	English
Title of host publication	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	IEEE
Pages	1-2
Number of pages	2
Volume	2017-January
ISBN (Electronic)	9781538629079
DOIs	https://doi.org/10.1109/EDSSC.2017.8355965
Publication status	Published - 1 Dec 2017
Event	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Zyxel Auditorium and Learning Resource Center, National Tsing Hua University, Hsinchu, Taiwan Duration: 18 Oct 2017 → 20 Oct 2017

Conference

Conference	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/Territory	Taiwan
City	Hsinchu
Period	18/10/17 → 20/10/17

Keywords

high-k
NdTiON dielectric
Organic thin-film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2017.8355965

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title = "Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric",

abstract = "Pentacene organic thin-film transistors (OTFTs) with high-k NdON gate dielectric incorporating different Ti contents are fabricated and their physical and electrical characteristics are studied. With appropriate Ti content, the OTFT with NdTiON as gate dielectric can achieve improved performance, e.g. a carrier mobility of 0.80 cm2/V·s, a small threshold voltage of -1.25 V, and a small sub-threshold swing of 0.13 V/dec. The AFM results of the pentacene layer and the dielectric layer reveal that incorporating Ti into NdON can obtain a smoother dielectric surface, which should be due to the suppressed hygroscopicity of Nd oxide caused by the Ti incorporation. Both the smoother dielectric surface and thus larger pentacene grains grown are responsible for the improved carrier mobility of the device.",

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author = "Ma, {Y. X.} and Liu, {L. N.} and Tang, {Wing Man} and Lai, {P. T.}",

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booktitle = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",

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Ma, YX, Liu, LN, Tang, WM & Lai, PT 2017, Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. vol. 2017-January, IEEE, pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 18/10/17. https://doi.org/10.1109/EDSSC.2017.8355965

Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric. / Ma, Y. X.; Liu, L. N.; Tang, Wing Man et al.
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January IEEE, 2017. p. 1-2.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Tang, Wing Man

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PY - 2017/12/1

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N2 - Pentacene organic thin-film transistors (OTFTs) with high-k NdON gate dielectric incorporating different Ti contents are fabricated and their physical and electrical characteristics are studied. With appropriate Ti content, the OTFT with NdTiON as gate dielectric can achieve improved performance, e.g. a carrier mobility of 0.80 cm2/V·s, a small threshold voltage of -1.25 V, and a small sub-threshold swing of 0.13 V/dec. The AFM results of the pentacene layer and the dielectric layer reveal that incorporating Ti into NdON can obtain a smoother dielectric surface, which should be due to the suppressed hygroscopicity of Nd oxide caused by the Ti incorporation. Both the smoother dielectric surface and thus larger pentacene grains grown are responsible for the improved carrier mobility of the device.

AB - Pentacene organic thin-film transistors (OTFTs) with high-k NdON gate dielectric incorporating different Ti contents are fabricated and their physical and electrical characteristics are studied. With appropriate Ti content, the OTFT with NdTiON as gate dielectric can achieve improved performance, e.g. a carrier mobility of 0.80 cm2/V·s, a small threshold voltage of -1.25 V, and a small sub-threshold swing of 0.13 V/dec. The AFM results of the pentacene layer and the dielectric layer reveal that incorporating Ti into NdON can obtain a smoother dielectric surface, which should be due to the suppressed hygroscopicity of Nd oxide caused by the Ti incorporation. Both the smoother dielectric surface and thus larger pentacene grains grown are responsible for the improved carrier mobility of the device.

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Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric

Abstract

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Keywords

ASJC Scopus subject areas

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