Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric

Y. X. Ma, L. N. Liu, Wing Man Tang, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Pentacene organic thin-film transistors (OTFTs) with high-k NdON gate dielectric incorporating different Ti contents are fabricated and their physical and electrical characteristics are studied. With appropriate Ti content, the OTFT with NdTiON as gate dielectric can achieve improved performance, e.g. a carrier mobility of 0.80 cm2/V·s, a small threshold voltage of -1.25 V, and a small sub-threshold swing of 0.13 V/dec. The AFM results of the pentacene layer and the dielectric layer reveal that incorporating Ti into NdON can obtain a smoother dielectric surface, which should be due to the suppressed hygroscopicity of Nd oxide caused by the Ti incorporation. Both the smoother dielectric surface and thus larger pentacene grains grown are responsible for the improved carrier mobility of the device.
Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherIEEE
Pages1-2
Number of pages2
Volume2017-January
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - 1 Dec 2017
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Zyxel Auditorium and Learning Resource Center, National Tsing Hua University, Hsinchu, Taiwan
Duration: 18 Oct 201720 Oct 2017

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan
CityHsinchu
Period18/10/1720/10/17

Keywords

  • high-k
  • NdTiON dielectric
  • Organic thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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