Improved performance of HEMTs with BN as heat dissipation

Z.Y. Lin, C.R. Liu, C.J. Zhou, Yang Chai, M.J. Zhou, Y. Pei

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research

Original language	English
Title of host publication	[Missing Source Name from PIRA]
Publisher	IEEE
ISBN (Print)	9781467389693
Publication status	Published - 2016
Event	IEEE International Nanoelectronics Conference - Duration: 1 Jan 2016 → …

Conference	IEEE International Nanoelectronics Conference
Period	1/01/16 → …

Keywords

@inproceedings{9e724f1095524728a0f87f0c32d65cb9,

title = "Improved performance of HEMTs with BN as heat dissipation",

keywords = "High electron mobility transistor, Boron nitride, Thermal management",

author = "Z.Y. Lin and C.R. Liu and C.J. Zhou and Yang Chai and M.J. Zhou and Y. Pei",

year = "2016",

language = "English",

isbn = "9781467389693",

booktitle = "[Missing Source Name from PIRA]",

publisher = "IEEE",

address = "United States",

note = "IEEE International Nanoelectronics Conference ; Conference date: 01-01-2016",

}

TY - GEN

T1 - Improved performance of HEMTs with BN as heat dissipation

AU - Lin, Z.Y.

AU - Liu, C.R.

AU - Zhou, C.J.

AU - Chai, Yang

AU - Zhou, M.J.

AU - Pei, Y.

PY - 2016

Y1 - 2016

KW - High electron mobility transistor

KW - Boron nitride

KW - Thermal management

M3 - Conference article published in proceeding or book

SN - 9781467389693

BT - [Missing Source Name from PIRA]

PB - IEEE

T2 - IEEE International Nanoelectronics Conference

Y2 - 1 January 2016

ER -