Improved performance of bottom-contact organic thin-film transistor using Al doped HfO₂ gate dielectric

Keyphrases

• Al-doped HfO2 100%
• Aluminum Doping 25%
• Atomic Layer Deposition 25%
• Band Gap 25%
• Bottom Contact 100%
• Conduction Band Offset 25%
• Copper Phthalocyanine 25%
• CuPc 25%
• Dielectric 50%
• Doped HfO2 25%
• Gate Dielectric 100%
• HfAlO 75%
• HfO2 50%
• HfO2 Films 25%
• Interface Quality 25%
• ION-IOFF 50%
• Leakage Current Density 25%
• Low Leakage Current 25%
• Low Voltage 25%
• Organic Thin-film Transistors 100%
• Performance Improvement 100%
• Subthreshold Slope 25%
• Temperature Effect 25%

Material Science

• Aluminum 20%
• Band Offset 20%
• Density 20%
• Dielectric Material 100%
• Film 40%
• Thin-Film Transistor 100%