Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

Wing Man Tang, K. H. Cheng, C. H. Leung, P. T. Lai, J. P. Xu, C. M. Che

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

3 Citations (Scopus)

Abstract

OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.
Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages189-192
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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