Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

Wing Man Tang; K. H. Cheng; C. H. Leung; P. T. Lai; J. P. Xu; C. M. Che

doi:10.1109/EDSSC.2007.4450094

Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

Wing Man Tang, K. H. Cheng, C. H. Leung, P. T. Lai, J. P. Xu, C. M. Che

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

3 Citations (Scopus)

Abstract

OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	189-192
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450094
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 20 Dec 2007 → 22 Dec 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	20/12/07 → 22/12/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

More information

10.1109/EDSSC.2007.4450094

Cite this

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title = "Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing",

abstract = "OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.",

author = "Tang, {Wing Man} and Cheng, {K. H.} and Leung, {C. H.} and Lai, {P. T.} and Xu, {J. P.} and Che, {C. M.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2007.4450094",

language = "English",

isbn = "1424406374",

pages = "189--192",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

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Tang, WM, Cheng, KH, Leung, CH, Lai, PT, Xu, JP & Che, CM 2007, Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450094, pp. 189-192, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450094

Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing. / Tang, Wing Man; Cheng, K. H.; Leung, C. H. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 189-192 4450094.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Xu, J. P.

AU - Che, C. M.

PY - 2007/12/1

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N2 - OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.

AB - OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.

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M3 - Conference article published in proceeding or book

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SN - 9781424406371

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BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

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ASJC Scopus subject areas

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