Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Jieji Ruan; Xiangbiao Qiu; Zhoushen Yuan; Dianxiang Ji; Peng Wang; Aidong Li; Di Wu

doi:10.1063/1.4937390

Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Jieji Ruan, Xiangbiao Qiu, Zhoushen Yuan, Dianxiang Ji, Peng Wang, Aidong Li, Di Wu

Research output: Journal article publication › Journal article › Academic research › peer-review

18 Citations (Scopus)

Abstract

Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La_0.7Sr_0.3MnO₃ and La_0.7Sr_0.3Mn_0.8Ru_0.2O₃ ferromagnetic electrodes and a SrTiO₃/BaTiO₃ dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO₃ barrier, the insertion of a SrTiO₃ dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.

Original language	English
Article number	232902
Journal	Applied Physics Letters
Volume	107
Issue number	23
DOIs	https://doi.org/10.1063/1.4937390
Publication status	Published - 7 Dec 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4937390

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abstract = "Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.",

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AU - Ruan, Jieji

AU - Qiu, Xiangbiao

AU - Yuan, Zhoushen

AU - Ji, Dianxiang

AU - Wang, Peng

AU - Li, Aidong

AU - Wu, Di

PY - 2015/12/7

Y1 - 2015/12/7

N2 - Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.

AB - Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.

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DO - 10.1063/1.4937390

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Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Abstract

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