Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Jieji Ruan; Xiangbiao Qiu; Zhoushen Yuan; Dianxiang Ji; Peng Wang; Aidong Li; Di Wu

doi:10.1063/1.4937390

Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Jieji Ruan, Xiangbiao Qiu, Zhoushen Yuan, Dianxiang Ji, Peng Wang, Aidong Li, Di Wu

Research output: Journal article publication › Journal article › Academic research › peer-review

24 Citations (Scopus)

Abstract

Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La_0.7Sr_0.3MnO₃ and La_0.7Sr_0.3Mn_0.8Ru_0.2O₃ ferromagnetic electrodes and a SrTiO₃/BaTiO₃ dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO₃ barrier, the insertion of a SrTiO₃ dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.

Original language	English
Article number	232902
Journal	Applied Physics Letters
Volume	107
Issue number	23
DOIs	https://doi.org/10.1063/1.4937390
Publication status	Published - 7 Dec 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.4937390

Cite this

@article{b5947cab145c4e47be206ba9f63c95a5,

title = "Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier",

abstract = "Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.",

author = "Jieji Ruan and Xiangbiao Qiu and Zhoushen Yuan and Dianxiang Ji and Peng Wang and Aidong Li and Di Wu",

year = "2015",

month = dec,

day = "7",

doi = "10.1063/1.4937390",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

AU - Ruan, Jieji

AU - Qiu, Xiangbiao

AU - Yuan, Zhoushen

AU - Ji, Dianxiang

AU - Wang, Peng

AU - Li, Aidong

AU - Wu, Di

PY - 2015/12/7

Y1 - 2015/12/7

N2 - Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.

AB - Four-state non-volatile memory functions are demonstrated in all-oxide multiferroic tunnel junctions (MFTJs), composed of La0.7Sr0.3MnO3 and La0.7Sr0.3Mn0.8Ru0.2O3 ferromagnetic electrodes and a SrTiO3/BaTiO3 dielectric/ferroelectric composite barrier. Compared with MFTJs with a single BaTiO3 barrier, the insertion of a SrTiO3 dielectric barrier is shown effective to enhance both the electroresistance and the magnetoresistance of the MFTJs. In particular, the tunneling electroresistance ratio is greatly improved by two orders. This is discussed in terms of the enhanced asymmetry in the electrostatic modulation on the barrier profile with respect to the ferroelectric polarization direction.

UR - http://www.scopus.com/inward/record.url?scp=84950131447&partnerID=8YFLogxK

U2 - 10.1063/1.4937390

DO - 10.1063/1.4937390

M3 - Journal article

AN - SCOPUS:84950131447

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232902

ER -

Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this