Abstract
The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N2-/NH3-plasma are investigated, showing that lower interface-state density (1.24 × 1012cm- 2eV- 1near midgap), smaller gate leakage current density (1.34 × 10- 5A/cm2at Vfb+ 1 V), smaller capacitance equivalent thickness (1.43 nm), and larger equivalent dielectric constant (24.5) can be achieved for the sample with NH3-plasma treatment than the samples with N2-/no-plasma treatment. The mechanisms lie in the fact that NH3-plasma can provide not only N atoms, but H atoms and NH radicals to effectively passivate the high-k/GaAs interface, thus less pinning the Femi level at high-k/GaAs interface.
Original language | English |
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Pages (from-to) | 17-21 |
Number of pages | 5 |
Journal | Microelectronics Reliability |
Volume | 56 |
DOIs | |
Publication status | Published - 1 Jan 2016 |
Keywords
- GaAs MOS devices
- Interface-state density
- Interfacial passivation layer
- NH -plasma treatment 3
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering