Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

H. H. Lu, J. P. Xu, L. Liu, L. S. Wang, P. T. Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)


The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N2-/NH3-plasma are investigated, showing that lower interface-state density (1.24 × 1012cm- 2eV- 1near midgap), smaller gate leakage current density (1.34 × 10- 5A/cm2at Vfb+ 1 V), smaller capacitance equivalent thickness (1.43 nm), and larger equivalent dielectric constant (24.5) can be achieved for the sample with NH3-plasma treatment than the samples with N2-/no-plasma treatment. The mechanisms lie in the fact that NH3-plasma can provide not only N atoms, but H atoms and NH radicals to effectively passivate the high-k/GaAs interface, thus less pinning the Femi level at high-k/GaAs interface.
Original languageEnglish
Pages (from-to)17-21
Number of pages5
JournalMicroelectronics Reliability
Publication statusPublished - 1 Jan 2016


  • GaAs MOS devices
  • Interface-state density
  • Interfacial passivation layer
  • NH -plasma treatment 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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