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Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment

  • Yong Huang
  • , Jing Ping Xu
  • , Lu Liu
  • , Zhi Xiang Cheng
  • , Pui To Lai
  • , Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

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