Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
- Yong Huang
- , Jing Ping Xu
- , Lu Liu
- , Zhi Xiang Cheng
- , Pui To Lai
- , Wing Man Tang
Research output: Journal article publication › Journal article › Academic research › peer-review
5
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(Scopus)