Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Z. X. Cheng; J. P. Xu; L. Liu; Y. Huang; P. T. Lai; Wing Man Tang

doi:10.1063/1.4958837

Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Z. X. Cheng, J. P. Xu, L. Liu, Y. Huang, P. T. Lai, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOxand LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under high-field stress.

Original language	English
Article number	023514
Journal	Applied Physics Letters
Volume	109
Issue number	2
DOIs	https://doi.org/10.1063/1.4958837
Publication status	Published - 11 Jul 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.4958837

http://hdl.handle.net/10397/61933

Cite this

@article{04bafcf39aea44598172932ee231df0c,

title = "Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer",

abstract = "The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOxand LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under high-field stress.",

author = "Cheng, {Z. X.} and Xu, {J. P.} and L. Liu and Y. Huang and Lai, {P. T.} and Tang, {Wing Man}",

year = "2016",

month = jul,

day = "11",

doi = "10.1063/1.4958837",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

AU - Cheng, Z. X.

AU - Xu, J. P.

AU - Liu, L.

AU - Huang, Y.

AU - Lai, P. T.

AU - Tang, Wing Man

PY - 2016/7/11

Y1 - 2016/7/11

N2 - The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOxand LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under high-field stress.

AB - The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOxand LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under high-field stress.

UR - http://www.scopus.com/inward/record.url?scp=84978722227&partnerID=8YFLogxK

U2 - 10.1063/1.4958837

DO - 10.1063/1.4958837

M3 - Journal article

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023514

ER -

Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

Abstract

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