The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOxand LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011cm-2eV-1) and oxide-charge density (-3.90 × 1012cm-2), low gate leakage current density (1.77 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under high-field stress.
|Journal||Applied Physics Letters|
|Publication status||Published - 11 Jul 2016|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)