Abstract
ZrON gate-dielectric GaAs metal-oxide- semiconductor capacitors with a LaSiON interfacial passivation layer (IPL) and different fluorine-plasma-treatment methods are fabricated and investigated. Compared to using plasma-treating a GaAs surface or no plasma treatment, the sample with plasma-treated IPL exhibits the lowest interface-state density (1.08 × 1012cm-2eV-1), highest k value (18.3) and smallest gate-leakage current (1.62 × 10-5A/cm2at Vfb + 1 V). The fact that plasma-treating IPL can effectively reduce the defectrelated Ga/As-O and As-As bonds at GaAs surface and also incorporate more F into the gate stack to passivate the defects in it and at/near IPL/GaAs interface should be responsible for these.
| Original language | English |
|---|---|
| Article number | 7922617 |
| Pages (from-to) | 458-462 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 17 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Jun 2017 |
Keywords
- F-plasma treatment
- GaAs MOS capacitor
- Interface-state density
- Interfacial passivation layer
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering