Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer

Han Han Lu, Jing Ping Xu, Lu Liu, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


ZrON gate-dielectric GaAs metal-oxide- semiconductor capacitors with a LaSiON interfacial passivation layer (IPL) and different fluorine-plasma-treatment methods are fabricated and investigated. Compared to using plasma-treating a GaAs surface or no plasma treatment, the sample with plasma-treated IPL exhibits the lowest interface-state density (1.08 × 1012cm-2eV-1), highest k value (18.3) and smallest gate-leakage current (1.62 × 10-5A/cm2at Vfb + 1 V). The fact that plasma-treating IPL can effectively reduce the defectrelated Ga/As-O and As-As bonds at GaAs surface and also incorporate more F into the gate stack to passivate the defects in it and at/near IPL/GaAs interface should be responsible for these.
Original languageEnglish
Article number7922617
Pages (from-to)458-462
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Issue number2
Publication statusPublished - 1 Jun 2017


  • F-plasma treatment
  • GaAs MOS capacitor
  • Interface-state density
  • Interfacial passivation layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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