Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer

Han Han Lu; Jing Ping Xu; Lu Liu; Pui To Lai; Wing Man Tang

doi:10.1109/TDMR.2017.2702717

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer

Han Han Lu, Jing Ping Xu, Lu Liu, Pui To Lai, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

ZrON gate-dielectric GaAs metal-oxide- semiconductor capacitors with a LaSiON interfacial passivation layer (IPL) and different fluorine-plasma-treatment methods are fabricated and investigated. Compared to using plasma-treating a GaAs surface or no plasma treatment, the sample with plasma-treated IPL exhibits the lowest interface-state density (1.08 × 1012cm-2eV-1), highest k value (18.3) and smallest gate-leakage current (1.62 × 10-5A/cm2at Vfb + 1 V). The fact that plasma-treating IPL can effectively reduce the defectrelated Ga/As-O and As-As bonds at GaAs surface and also incorporate more F into the gate stack to passivate the defects in it and at/near IPL/GaAs interface should be responsible for these.

Original language	English
Article number	7922617
Pages (from-to)	458-462
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2017.2702717
Publication status	Published - 1 Jun 2017

Keywords

F-plasma treatment
GaAs MOS capacitor
Interface-state density
Interfacial passivation layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

More information

10.1109/TDMR.2017.2702717

Cite this

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title = "Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer",

abstract = "ZrON gate-dielectric GaAs metal-oxide- semiconductor capacitors with a LaSiON interfacial passivation layer (IPL) and different fluorine-plasma-treatment methods are fabricated and investigated. Compared to using plasma-treating a GaAs surface or no plasma treatment, the sample with plasma-treated IPL exhibits the lowest interface-state density (1.08 × 1012cm-2eV-1), highest k value (18.3) and smallest gate-leakage current (1.62 × 10-5A/cm2at Vfb + 1 V). The fact that plasma-treating IPL can effectively reduce the defectrelated Ga/As-O and As-As bonds at GaAs surface and also incorporate more F into the gate stack to passivate the defects in it and at/near IPL/GaAs interface should be responsible for these.",

keywords = "F-plasma treatment, GaAs MOS capacitor, Interface-state density, Interfacial passivation layer",

author = "Lu, {Han Han} and Xu, {Jing Ping} and Lu Liu and Lai, {Pui To} and Tang, {Wing Man}",

year = "2017",

month = jun,

day = "1",

doi = "10.1109/TDMR.2017.2702717",

language = "English",

volume = "17",

pages = "458--462",

journal = "IEEE Transactions on Device and Materials Reliability",

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publisher = "IEEE",

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Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer. / Lu, Han Han; Xu, Jing Ping; Liu, Lu et al.
In: IEEE Transactions on Device and Materials Reliability, Vol. 17, No. 2, 7922617, 01.06.2017, p. 458-462.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer

AU - Lu, Han Han

AU - Xu, Jing Ping

AU - Liu, Lu

AU - Lai, Pui To

AU - Tang, Wing Man

PY - 2017/6/1

Y1 - 2017/6/1

N2 - ZrON gate-dielectric GaAs metal-oxide- semiconductor capacitors with a LaSiON interfacial passivation layer (IPL) and different fluorine-plasma-treatment methods are fabricated and investigated. Compared to using plasma-treating a GaAs surface or no plasma treatment, the sample with plasma-treated IPL exhibits the lowest interface-state density (1.08 × 1012cm-2eV-1), highest k value (18.3) and smallest gate-leakage current (1.62 × 10-5A/cm2at Vfb + 1 V). The fact that plasma-treating IPL can effectively reduce the defectrelated Ga/As-O and As-As bonds at GaAs surface and also incorporate more F into the gate stack to passivate the defects in it and at/near IPL/GaAs interface should be responsible for these.

AB - ZrON gate-dielectric GaAs metal-oxide- semiconductor capacitors with a LaSiON interfacial passivation layer (IPL) and different fluorine-plasma-treatment methods are fabricated and investigated. Compared to using plasma-treating a GaAs surface or no plasma treatment, the sample with plasma-treated IPL exhibits the lowest interface-state density (1.08 × 1012cm-2eV-1), highest k value (18.3) and smallest gate-leakage current (1.62 × 10-5A/cm2at Vfb + 1 V). The fact that plasma-treating IPL can effectively reduce the defectrelated Ga/As-O and As-As bonds at GaAs surface and also incorporate more F into the gate stack to passivate the defects in it and at/near IPL/GaAs interface should be responsible for these.

KW - F-plasma treatment

KW - GaAs MOS capacitor

KW - Interface-state density

KW - Interfacial passivation layer

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DO - 10.1109/TDMR.2017.2702717

M3 - Journal article

SN - 1530-4388

VL - 17

SP - 458

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JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

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Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitor by using fluorine-plasma-treated interfacial passivation layer

Abstract

Keywords

ASJC Scopus subject areas

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