Improved interfacial and electrical properties of few-layered MoS 2 FETs with plasma-treated Al 2 O 3 as gate dielectric
- Xingjuan Song
- , Jingping Xu
- , Lu Liu
- , Pui To Lai
- , Wing Man Tang
Research output: Journal article publication › Journal article › Academic research › peer-review
25
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(Scopus)