Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by la doping

Y. Liu, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

3 Citations (Scopus)

Abstract

An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3Schottky diode.
Original languageEnglish
Title of host publication2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
PublisherIEEE
Pages338-341
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Conference

Conference2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/TerritoryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • gas sensor
  • hydrogen
  • Schottky diode
  • SiC

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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