Abstract
An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3Schottky diode.
Original language | English |
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Title of host publication | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
Publisher | IEEE |
Pages | 338-341 |
Number of pages | 4 |
ISBN (Electronic) | 9781509018307 |
DOIs | |
Publication status | Published - 15 Dec 2016 |
Event | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016 |
Conference
Conference | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
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Country/Territory | Hong Kong |
City | Hong Kong |
Period | 3/08/16 → 5/08/16 |
Keywords
- gas sensor
- hydrogen
- Schottky diode
- SiC
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture