Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by la doping

Y. Liu; P. T. Lai; Wing Man Tang

doi:10.1109/EDSSC.2016.7785277

Improved hydrogen-sensing performance of Pd/WO₃/SiC Schottky diode by la doping

Y. Liu, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

5 Citations (Scopus)

Abstract

An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3Schottky diode.

Original language	English
Title of host publication	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	IEEE
Pages	338-341
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785277
Publication status	Published - 15 Dec 2016
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Conference

Conference	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

Keywords

gas sensor
hydrogen
Schottky diode
SiC

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

More information

10.1109/EDSSC.2016.7785277

Cite this

@inproceedings{53e80fb905094d05b0d76178dc99d1ea,

title = "Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by la doping",

abstract = "An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3Schottky diode.",

keywords = "gas sensor, hydrogen, Schottky diode, SiC",

author = "Y. Liu and Lai, {P. T.} and Tang, {Wing Man}",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785277",

language = "English",

pages = "338--341",

booktitle = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

}

Liu, Y, Lai, PT & Tang, WM 2016, Improved hydrogen-sensing performance of Pd/WO₃/SiC Schottky diode by la doping. in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016., 7785277, IEEE, pp. 338-341, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785277

Improved hydrogen-sensing performance of Pd/WO₃/SiC Schottky diode by la doping. / Liu, Y.; Lai, P. T.; Tang, Wing Man.
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. IEEE, 2016. p. 338-341 7785277.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by la doping

AU - Liu, Y.

AU - Lai, P. T.

AU - Tang, Wing Man

PY - 2016/12/15

Y1 - 2016/12/15

N2 - An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3Schottky diode.

AB - An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3Schottky diode.

KW - gas sensor

KW - hydrogen

KW - Schottky diode

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=85010509936&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2016.7785277

DO - 10.1109/EDSSC.2016.7785277

M3 - Conference article published in proceeding or book

SP - 338

EP - 341

BT - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

PB - IEEE

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -