Abstract
The effects of fluorine incorporation in amorphous InGaZnO by ion implant on the characteristics of InGaZnO thin-film transistor have been investigated. The electrical characteristics of thin-film transistor can be improved by this treatment due to increase of carrier concentration and passivation of defects in InGaZnO. Consequently, the saturation carrier mobility can be increased from 25.2 cm2/V · s to a high value of 34.0 cm2/V · s, and the output current can be nearly doubled. However, device degradation is observed for very high fluorine dose above 1.0 × 1015/cm2, possibly ascribed to excessive interstitial fluorine atoms and too many fluorine-induced electrons in InGaZnO.
| Original language | English |
|---|---|
| Journal | ECS Solid State Letters |
| Volume | 3 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1 Jan 2014 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering