Abstract
OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.
Original language | English |
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Title of host publication | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
Publisher | IEEE |
Pages | 365-368 |
Number of pages | 4 |
ISBN (Electronic) | 9781509018307 |
DOIs | |
Publication status | Published - 15 Dec 2016 |
Event | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016 |
Conference
Conference | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
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Country/Territory | Hong Kong |
City | Hong Kong |
Period | 3/08/16 → 5/08/16 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture