Improved characteristics for OTFT with HfO2gate dielectric by using chlorinated indium tin oxide gate electrode

Wing Man Tang; M. G. Helander; M. T. Greiner; Z. H. Lu; W. T. Ng

doi:10.1109/EDSSC.2016.7785284

Improved characteristics for OTFT with HfO₂gate dielectric by using chlorinated indium tin oxide gate electrode

Wing Man Tang, M. G. Helander, M. T. Greiner, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.

Original language	English
Title of host publication	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	IEEE
Pages	365-368
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785284
Publication status	Published - 15 Dec 2016
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Conference

Conference	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

More information

10.1109/EDSSC.2016.7785284

Cite this

@inproceedings{df1a815e9feb47e59e2153cc90ee81f4,

title = "Improved characteristics for OTFT with HfO2gate dielectric by using chlorinated indium tin oxide gate electrode",

abstract = "OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.",

author = "Tang, {Wing Man} and Helander, {M. G.} and Greiner, {M. T.} and Lu, {Z. H.} and Ng, {W. T.}",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785284",

language = "English",

pages = "365--368",

booktitle = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

}

Tang, WM, Helander, MG, Greiner, MT, Lu, ZH & Ng, WT 2016, Improved characteristics for OTFT with HfO₂gate dielectric by using chlorinated indium tin oxide gate electrode. in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016., 7785284, IEEE, pp. 365-368, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785284

Improved characteristics for OTFT with HfO₂gate dielectric by using chlorinated indium tin oxide gate electrode. / Tang, Wing Man; Helander, M. G.; Greiner, M. T. et al.
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. IEEE, 2016. p. 365-368 7785284.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Improved characteristics for OTFT with HfO2gate dielectric by using chlorinated indium tin oxide gate electrode

AU - Tang, Wing Man

AU - Helander, M. G.

AU - Greiner, M. T.

AU - Lu, Z. H.

AU - Ng, W. T.

PY - 2016/12/15

Y1 - 2016/12/15

N2 - OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.

AB - OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.

UR - http://www.scopus.com/inward/record.url?scp=85010567571&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2016.7785284

DO - 10.1109/EDSSC.2016.7785284

M3 - Conference article published in proceeding or book

SP - 365

EP - 368

BT - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

PB - IEEE

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -