Improved characteristics for OTFT with HfO2gate dielectric by using chlorinated indium tin oxide gate electrode

Wing Man Tang, M. G. Helander, M. T. Greiner, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.
Original languageEnglish
Title of host publication2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
PublisherIEEE
Pages365-368
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Conference

Conference2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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