Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET

Keyphrases

• Electrical Characteristics 100%
• Fin Field-effect Transistor (FinFET) 100%
• Non-rectangular 100%
• Fin Height 100%
• Sidewall 66%
• Inclination Angle 66%
• Processing Technology 33%
• Fin Width 33%
• Non-uniform Currents 33%
• Nonlinear Dependence 33%
• Device Performance 33%
• Photolithography 33%
• Design Requirements 33%
• Series Resistance 33%
• Planar MOSFET 33%
• Current Crowding 33%
• Fin Geometry 33%
• Short Channel Effects 33%
• Current Flow 33%
• On-state Current 33%
• Double Gate FinFETs 33%
• Different Inclination 33%

Engineering

• Fin Height 100%
• Cross Section 100%
• Side Wall 66%
• Inclination Angle 66%
• Processing Technology 33%
• Design Constraint 33%
• Series Resistance 33%
• Device Performance 33%
• Current Flow 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Optical Lithography 33%
• Fin Width 33%
• Linear Dependence 33%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electrical Property 100%