Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET

Xusheng Wu, Philip Ching Ho Chan, Mansun Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

64 Citations (Scopus)


The effects of nonrectangular fin cross section of double-gate FinFETs are studied. For a given top-fin width, which is defined by the photolithography step, the short-channel effect immunity is degraded by the inclination of the sidewalls. The nonrectangular fin geometry also leads to nonuniform current flow and current crowding in the vertical direction. Together with the nonuniform series resistance along the height of the fin, a non-linear dependence of on-current with fin heights (which have been regarded as the Ws in planar MOSFET) is observed. The impacts of nonvertical sidewall have been characterized according to the inclination angle in this work. Under different inclination angles as dictated by the processing technology, the device performances at various fin heights are characterized. A new design constraint that limits the choice of fin height for a given technology is also discussed.
Original languageEnglish
Pages (from-to)63-68
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 1 Jan 2005
Externally publishedYes


  • FinFET
  • Series resistance
  • Short-channel effect (SCE)
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET'. Together they form a unique fingerprint.

Cite this