Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs

Srinivasa R. Banna, Philip Ching Ho Chan, Mansun Chan, Ping K. Ko

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

4 Citations (Scopus)

Abstract

Scaling silicon film thickness increases drain electric field and hot carrier effects in FDSOI. Debiasing effect of Rds and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.
Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages112-113
Number of pages2
Publication statusPublished - 1 Jan 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, United States
Duration: 24 Jun 199626 Jun 1996

Conference

ConferenceProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CountryUnited States
CitySanta Barbara, CA
Period24/06/9626/06/96

ASJC Scopus subject areas

  • Engineering(all)

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