Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs

Srinivasa R. Banna; Philip Ching Ho Chan; Mansun Chan; Ping K. Ko

Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs

Srinivasa R. Banna, Philip Ching Ho Chan, Mansun Chan, Ping K. Ko

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

5 Citations (Scopus)

Abstract

Scaling silicon film thickness increases drain electric field and hot carrier effects in FDSOI. Debiasing effect of Rds and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.

Original language	English
Title of host publication	Annual Device Research Conference Digest
Publisher	IEEE
Pages	112-113
Number of pages	2
Publication status	Published - 1 Jan 1996
Externally published	Yes
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, United States Duration: 24 Jun 1996 → 26 Jun 1996

Conference

Conference	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
Country/Territory	United States
City	Santa Barbara, CA
Period	24/06/96 → 26/06/96

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{892b33a648b4401a9bf7f19a487a9ad5,

title = "Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs",

abstract = "Scaling silicon film thickness increases drain electric field and hot carrier effects in FDSOI. Debiasing effect of Rds and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.",

author = "Banna, {Srinivasa R.} and Chan, {Philip Ching Ho} and Mansun Chan and Ko, {Ping K.}",

year = "1996",

month = jan,

day = "1",

language = "English",

pages = "112--113",

booktitle = "Annual Device Research Conference Digest",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

}

Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs. / Banna, Srinivasa R.; Chan, Philip Ching Ho; Chan, Mansun et al.

Annual Device Research Conference Digest. IEEE, 1996. p. 112-113.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs

AU - Banna, Srinivasa R.

AU - Chan, Philip Ching Ho

AU - Chan, Mansun

AU - Ko, Ping K.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Scaling silicon film thickness increases drain electric field and hot carrier effects in FDSOI. Debiasing effect of Rds and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.

AB - Scaling silicon film thickness increases drain electric field and hot carrier effects in FDSOI. Debiasing effect of Rds and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.

UR - http://www.scopus.com/inward/record.url?scp=0029723162&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 112

EP - 113

BT - Annual Device Research Conference Digest

PB - IEEE

T2 - Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC

Y2 - 24 June 1996 through 26 June 1996

ER -

Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs

Abstract

Conference

ASJC Scopus subject areas

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