Abstract
Scaling silicon film thickness increases drain electric field and hot carrier effects in FDSOI. Debiasing effect of Rds and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.
Original language | English |
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Title of host publication | Annual Device Research Conference Digest |
Publisher | IEEE |
Pages | 112-113 |
Number of pages | 2 |
Publication status | Published - 1 Jan 1996 |
Externally published | Yes |
Event | Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, United States Duration: 24 Jun 1996 → 26 Jun 1996 |
Conference
Conference | Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC |
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Country/Territory | United States |
City | Santa Barbara, CA |
Period | 24/06/96 → 26/06/96 |
ASJC Scopus subject areas
- General Engineering