Impact of Nitrogen Incorporation on the Interface between Ge and La2O3or Y2O3Gate Dielectric: A Study on the Formation of Germanate

Zhi Xiang Cheng; Lu Liu; Jing Ping Xu; Yong Huang; Pui To Lai; Wing Man Tang

doi:10.1109/TED.2016.2618221

Impact of Nitrogen Incorporation on the Interface between Ge and La₂O₃or Y₂O₃Gate Dielectric: A Study on the Formation of Germanate

Zhi Xiang Cheng, Lu Liu, Jing Ping Xu, Yong Huang, Pui To Lai, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

La2O3and Y2O3are used as gate dielectric in Ge MOS capacitors, and their electrical and interfacial properties are comparatively studied. Due to the much higher reactivity of La2O3with Ge than Y2O3, thicker germanate interlayer is formed, leading to better interface quality for the former. Moreover, it is found that N incorporation in the oxides reduces the formation of both germanate and GeOx, with much more obvious effect for La2O3and thus the best interface quality (a low interface-state density of 4.96 × 1011cm-2eV-1), which gives promising electrical properties: large equivalent dielectric constant (18.8), small flat-band shift (0.37 V), low gate leakage current (2.89 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under electrical stress.

Original language	English
Article number	7725493
Pages (from-to)	4888-4892
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	12
DOIs	https://doi.org/10.1109/TED.2016.2618221
Publication status	Published - 1 Dec 2016

Keywords

Ge MOS
germanate
interface quality
nitrogen incorporation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TED.2016.2618221

Cite this

@article{aafb9ffed5544db2897862b29ebfdd45,

title = "Impact of Nitrogen Incorporation on the Interface between Ge and La2O3or Y2O3Gate Dielectric: A Study on the Formation of Germanate",

abstract = "La2O3and Y2O3are used as gate dielectric in Ge MOS capacitors, and their electrical and interfacial properties are comparatively studied. Due to the much higher reactivity of La2O3with Ge than Y2O3, thicker germanate interlayer is formed, leading to better interface quality for the former. Moreover, it is found that N incorporation in the oxides reduces the formation of both germanate and GeOx, with much more obvious effect for La2O3and thus the best interface quality (a low interface-state density of 4.96 × 1011cm-2eV-1), which gives promising electrical properties: large equivalent dielectric constant (18.8), small flat-band shift (0.37 V), low gate leakage current (2.89 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under electrical stress.",

keywords = "Ge MOS, germanate, interface quality, nitrogen incorporation",

author = "Cheng, {Zhi Xiang} and Lu Liu and Xu, {Jing Ping} and Yong Huang and Lai, {Pui To} and Tang, {Wing Man}",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/TED.2016.2618221",

language = "English",

volume = "63",

pages = "4888--4892",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "12",

}

Impact of Nitrogen Incorporation on the Interface between Ge and La₂O₃or Y₂O₃Gate Dielectric: A Study on the Formation of Germanate. / Cheng, Zhi Xiang; Liu, Lu; Xu, Jing Ping et al.
In: IEEE Transactions on Electron Devices, Vol. 63, No. 12, 7725493, 01.12.2016, p. 4888-4892.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Impact of Nitrogen Incorporation on the Interface between Ge and La2O3or Y2O3Gate Dielectric: A Study on the Formation of Germanate

AU - Cheng, Zhi Xiang

AU - Liu, Lu

AU - Xu, Jing Ping

AU - Huang, Yong

AU - Lai, Pui To

AU - Tang, Wing Man

PY - 2016/12/1

Y1 - 2016/12/1

N2 - La2O3and Y2O3are used as gate dielectric in Ge MOS capacitors, and their electrical and interfacial properties are comparatively studied. Due to the much higher reactivity of La2O3with Ge than Y2O3, thicker germanate interlayer is formed, leading to better interface quality for the former. Moreover, it is found that N incorporation in the oxides reduces the formation of both germanate and GeOx, with much more obvious effect for La2O3and thus the best interface quality (a low interface-state density of 4.96 × 1011cm-2eV-1), which gives promising electrical properties: large equivalent dielectric constant (18.8), small flat-band shift (0.37 V), low gate leakage current (2.89 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under electrical stress.

AB - La2O3and Y2O3are used as gate dielectric in Ge MOS capacitors, and their electrical and interfacial properties are comparatively studied. Due to the much higher reactivity of La2O3with Ge than Y2O3, thicker germanate interlayer is formed, leading to better interface quality for the former. Moreover, it is found that N incorporation in the oxides reduces the formation of both germanate and GeOx, with much more obvious effect for La2O3and thus the best interface quality (a low interface-state density of 4.96 × 1011cm-2eV-1), which gives promising electrical properties: large equivalent dielectric constant (18.8), small flat-band shift (0.37 V), low gate leakage current (2.89 × 10-4A/cm2at Vg= Vfb+ 1 V), and high reliability under electrical stress.

KW - Ge MOS

KW - germanate

KW - interface quality

KW - nitrogen incorporation

UR - http://www.scopus.com/inward/record.url?scp=84994300341&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2618221

DO - 10.1109/TED.2016.2618221

M3 - Journal article

SN - 0018-9383

VL - 63

SP - 4888

EP - 4892

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 7725493

ER -