Impact of material anisotropy on ultrafast laser dicing of SiC wafers for enhancing efficiency and quality

Silicon carbide (SiC) is essential for advancing high-tech industries such as new energy vehicles and AI data centers. However, its anisotropic properties pose challenges to the quality and efficiency of laser dicing, a cutting-edge semiconductor manufacturing technique. This study investigates the impact of material anisotropy on ultrafast laser processing using the “laser scribing-and-breaking” method. Experimental results indicate that scanning speed significantly affects the morphology and phase composition of the scribing grooves more than other parameters. Successful wafer separation is achieved when modifications are made at the center of the scribinggrooves. When the laser is incident from the Si-face, modifications are more easily achieved, resulting in high-quality cross-section with an average surface roughness (Sa) of 0.235 µm. However, edge chipping is also observed on the Si-face. This research offers practical insights that enhance the current laser dicing process in the semiconductor industry.