Impact of applied strain on the electron transport through ferroelectric tunnel junctions

Xin Luo; S. P. Lin; Biao Wang; Yue Zheng

doi:10.1063/1.3462070

Impact of applied strain on the electron transport through ferroelectric tunnel junctions

Xin Luo, S. P. Lin, Biao Wang, Yue Zheng

Research output: Journal article publication › Journal article › Academic research › peer-review

15 Citations (Scopus)

Abstract

Combining nonequilibrium Green's functions with density-functional theory, we have investigated the effect of external strain field on the tunneling electroresistance (TER) of ferroelectric material sandwiched between Pt electrodes. The results show that the strain induced para/ferroelectric phase transitions play an important role in the electronic transport properties of the junction. Sizable enhancements in the resistance are found for the strained ferroelectric junctions with a TER ratio of 9000%. Detail analyses show that the Ti-O displacements along the transport direction in ferroelectric barrier change the effective potential profile, resulting in a giant piezoelectric resistance in the ferroelectric tunnel junctions.

Original language	English
Article number	012905
Journal	Applied Physics Letters
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.3462070
Publication status	Published - 5 Jul 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3462070

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title = "Impact of applied strain on the electron transport through ferroelectric tunnel junctions",

abstract = "Combining nonequilibrium Green's functions with density-functional theory, we have investigated the effect of external strain field on the tunneling electroresistance (TER) of ferroelectric material sandwiched between Pt electrodes. The results show that the strain induced para/ferroelectric phase transitions play an important role in the electronic transport properties of the junction. Sizable enhancements in the resistance are found for the strained ferroelectric junctions with a TER ratio of 9000%. Detail analyses show that the Ti-O displacements along the transport direction in ferroelectric barrier change the effective potential profile, resulting in a giant piezoelectric resistance in the ferroelectric tunnel junctions.",

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AU - Luo, Xin

AU - Lin, S. P.

AU - Wang, Biao

AU - Zheng, Yue

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Y1 - 2010/7/5

N2 - Combining nonequilibrium Green's functions with density-functional theory, we have investigated the effect of external strain field on the tunneling electroresistance (TER) of ferroelectric material sandwiched between Pt electrodes. The results show that the strain induced para/ferroelectric phase transitions play an important role in the electronic transport properties of the junction. Sizable enhancements in the resistance are found for the strained ferroelectric junctions with a TER ratio of 9000%. Detail analyses show that the Ti-O displacements along the transport direction in ferroelectric barrier change the effective potential profile, resulting in a giant piezoelectric resistance in the ferroelectric tunnel junctions.

AB - Combining nonequilibrium Green's functions with density-functional theory, we have investigated the effect of external strain field on the tunneling electroresistance (TER) of ferroelectric material sandwiched between Pt electrodes. The results show that the strain induced para/ferroelectric phase transitions play an important role in the electronic transport properties of the junction. Sizable enhancements in the resistance are found for the strained ferroelectric junctions with a TER ratio of 9000%. Detail analyses show that the Ti-O displacements along the transport direction in ferroelectric barrier change the effective potential profile, resulting in a giant piezoelectric resistance in the ferroelectric tunnel junctions.

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U2 - 10.1063/1.3462070

DO - 10.1063/1.3462070

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JO - Applied Physics Letters

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SN - 0003-6951

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ER -

Impact of applied strain on the electron transport through ferroelectric tunnel junctions

Abstract

ASJC Scopus subject areas

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