Imaging the near-field intensity gradients of a low power semiconductor laser

Nien Hua Lu; Din Ping Tsai; Wei Chih Lin; Hung Ji Huang

Imaging the near-field intensity gradients of a low power semiconductor laser

Nien Hua Lu, Din Ping Tsai, Wei Chih Lin, Hung Ji Huang

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga_0.4In_0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

Original language	English
Pages (from-to)	751-755
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3896
Publication status	Published - 30 Nov 1999
Externally published	Yes
Event	Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: 30 Nov 1999 → 3 Dec 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{fede8b72a6bf4252bd22defd1a6bbc88,

title = "Imaging the near-field intensity gradients of a low power semiconductor laser",

abstract = "A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.",

author = "Lu, {Nien Hua} and Tsai, {Din Ping} and Lin, {Wei Chih} and Huang, {Hung Ji}",

year = "1999",

month = nov,

day = "30",

language = "English",

volume = "3896",

pages = "751--755",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices ; Conference date: 30-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Imaging the near-field intensity gradients of a low power semiconductor laser

AU - Lu, Nien Hua

AU - Tsai, Din Ping

AU - Lin, Wei Chih

AU - Huang, Hung Ji

PY - 1999/11/30

Y1 - 1999/11/30

N2 - A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

AB - A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

UR - http://www.scopus.com/inward/record.url?scp=0033347619&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033347619

VL - 3896

SP - 751

EP - 755

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices

Y2 - 30 November 1999 through 3 December 1999

ER -

Imaging the near-field intensity gradients of a low power semiconductor laser

Abstract

ASJC Scopus subject areas

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