Imaging the near-field intensity gradients of a low power semiconductor laser

Nien Hua Lu, Din Ping Tsai, Wei Chih Lin, Hung Ji Huang

Research output: Journal article publicationConference articleAcademic researchpeer-review

Abstract

A newly developed inverted tapping-mode tuning-fork near-field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

Original languageEnglish
Pages (from-to)751-755
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3896
Publication statusPublished - 30 Nov 1999
Externally publishedYes
EventProceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore
Duration: 30 Nov 19993 Dec 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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