Hydrogen sensor based on pentacene thin-film transistor

Bochang Li, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.
Original languageEnglish
Title of host publication2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
PublisherIEEE
Pages468-471
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Conference

Conference2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • flexiblity
  • HfLaO
  • hydrogen sesnors
  • OTFT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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