Abstract
Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.
| Original language | English |
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| Title of host publication | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
| Publisher | IEEE |
| Pages | 468-471 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509018307 |
| DOIs | |
| Publication status | Published - 15 Dec 2016 |
| Event | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016 |
Conference
| Conference | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
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| Country/Territory | Hong Kong |
| City | Hong Kong |
| Period | 3/08/16 → 5/08/16 |
Keywords
- flexiblity
- HfLaO
- hydrogen sesnors
- OTFT
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture