Hydrogen sensor based on pentacene thin-film transistor

Bochang Li; P. T. Lai; Wing Man Tang

doi:10.1109/EDSSC.2016.7785309

Hydrogen sensor based on pentacene thin-film transistor

Bochang Li, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

4 Citations (Scopus)

Abstract

Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.

Original language	English
Title of host publication	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	IEEE
Pages	468-471
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785309
Publication status	Published - 15 Dec 2016
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Conference

Conference	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

Keywords

flexiblity
HfLaO
hydrogen sesnors
OTFT

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

More information

10.1109/EDSSC.2016.7785309

Cite this

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title = "Hydrogen sensor based on pentacene thin-film transistor",

abstract = "Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.",

keywords = "flexiblity, HfLaO, hydrogen sesnors, OTFT",

author = "Bochang Li and Lai, {P. T.} and Tang, {Wing Man}",

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doi = "10.1109/EDSSC.2016.7785309",

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address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

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Li, B, Lai, PT & Tang, WM 2016, Hydrogen sensor based on pentacene thin-film transistor. in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016., 7785309, IEEE, pp. 468-471, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785309

Hydrogen sensor based on pentacene thin-film transistor. / Li, Bochang; Lai, P. T.; Tang, Wing Man.

2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. IEEE, 2016. p. 468-471 7785309.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Hydrogen sensor based on pentacene thin-film transistor

AU - Li, Bochang

AU - Lai, P. T.

AU - Tang, Wing Man

PY - 2016/12/15

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N2 - Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.

AB - Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.

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PB - IEEE

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Hydrogen sensor based on pentacene thin-film transistor

Abstract

Conference

Keywords

ASJC Scopus subject areas

More information

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