Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Pichaya Pattanasattayavong, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C. O'Regan, Aram Amassian, Thomas D. Anthopoulos

Research output: Journal article publicationJournal articleAcademic researchpeer-review

140 Citations (Scopus)

Abstract

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2V-1s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.
Original languageEnglish
Pages (from-to)1504-1509
Number of pages6
JournalAdvanced Materials
Volume25
Issue number10
DOIs
Publication statusPublished - 13 Mar 2013

Keywords

  • copper thiocyanate
  • solution processing
  • transparent transistors
  • wide-bandgap p-type semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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