Abstract
Highly sensitive near-infrared (NIR) phototransistors based on poly(3-hexylthiophene) (P3HT) and lead sulfide quantum dots (PbS QDs) were fabricated by a solution process. The phototransistors show high responsivity up to 2 × 104A W-1under NIR illumination with wavelength of 895 nm, which is much bigger than that of the photodetectors based on PbS QDs or organic semiconductors only. The sensing mechanism is attributed to the photo-induced electrons generated in the PbS QDs, which increase the threshold voltage of the transistor. These phototransistors may find promising applications as infrared sensors for their high responsivity, easy fabrication, low cost and flexibility.
| Original language | English |
|---|---|
| Pages (from-to) | 21673-21678 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry |
| Volume | 22 |
| Issue number | 40 |
| DOIs | |
| Publication status | Published - 28 Oct 2012 |
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry
Fingerprint
Dive into the research topics of 'Highly sensitive organic near-infrared phototransistors based on poly(3-hexylthiophene) and PbS quantum dots'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver