Highly-sensitive and low power SOI lateral thyristive magnetometer

Jack Lau; Cuong T. Nguyen; Ping K. Ko; Philip Ching Ho Chan

Highly-sensitive and low power SOI lateral thyristive magnetometer

Jack Lau, Cuong T. Nguyen, Ping K. Ko, Philip Ching Ho Chan

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.

Original language	English
Pages (from-to)	143-146
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1 Dec 1994
Externally published	Yes
Event	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 11 Dec 1994 → 14 Dec 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

@article{e83d49dbea0d4411a33086d25b16090d,

title = "Highly-sensitive and low power SOI lateral thyristive magnetometer",

abstract = "We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.",

author = "Jack Lau and Nguyen, {Cuong T.} and Ko, {Ping K.} and Chan, {Philip Ching Ho}",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "143--146",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "IEEE",

note = "Proceedings of the 1994 IEEE International Electron Devices Meeting ; Conference date: 11-12-1994 Through 14-12-1994",

}

TY - JOUR

T1 - Highly-sensitive and low power SOI lateral thyristive magnetometer

AU - Lau, Jack

AU - Nguyen, Cuong T.

AU - Ko, Ping K.

AU - Chan, Philip Ching Ho

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.

AB - We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.

UR - http://www.scopus.com/inward/record.url?scp=0028737904&partnerID=8YFLogxK

M3 - Conference article

SN - 0163-1918

SP - 143

EP - 146

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1994 IEEE International Electron Devices Meeting

Y2 - 11 December 1994 through 14 December 1994

ER -

Highly-sensitive and low power SOI lateral thyristive magnetometer

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this