Highly-sensitive and low power SOI lateral thyristive magnetometer

Jack Lau, Cuong T. Nguyen, Ping K. Ko, Philip Ching Ho Chan

Research output: Journal article publicationConference articleAcademic researchpeer-review

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Abstract

We report here a lateral magnetometer fabricated on SOI using 6 masks. The sensor operates similar to a thyristor. With a supply voltage of 0.9 V and a total biasing current of 25 μA, the magnetometer achieves a relative sensitivity of 210%/Tesla and an absolute sensitivity of 105%/Tesla.
Original languageEnglish
Pages (from-to)143-146
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1 Dec 1994
Externally publishedYes
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 11 Dec 199414 Dec 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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