Abstract
Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 682-684 |
| Number of pages | 3 |
| Journal | Chemical Communications |
| Volume | 50 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 12 Dec 2014 |
ASJC Scopus subject areas
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- General Chemistry
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Fingerprint
Dive into the research topics of 'Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver