Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang, Shuti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

25 Citations (Scopus)


Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

Original languageEnglish
Pages (from-to)682-684
Number of pages3
JournalChemical Communications
Issue number6
Publication statusPublished - 12 Dec 2014

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this