Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Xingfu Wang; Jinhui Tong; Xin Chen; Bijun Zhao; Zhiwei Ren; Danwei Li; Xiangjing Zhuo; Jun Zhang; Hanxiang Yi; Chao Liu; Fang Fang; Shuti Li

doi:10.1039/c3cc47239f

Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang, Shuti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

26 Citations (Scopus)

Abstract

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

Original language	English
Pages (from-to)	682-684
Number of pages	3
Journal	Chemical Communications
Volume	50
Issue number	6
DOIs	https://doi.org/10.1039/c3cc47239f
Publication status	Published - 12 Dec 2014

ASJC Scopus subject areas

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/c3cc47239f

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abstract = "Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.",

author = "Xingfu Wang and Jinhui Tong and Xin Chen and Bijun Zhao and Zhiwei Ren and Danwei Li and Xiangjing Zhuo and Jun Zhang and Hanxiang Yi and Chao Liu and Fang Fang and Shuti Li",

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T1 - Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

AU - Wang, Xingfu

AU - Tong, Jinhui

AU - Chen, Xin

AU - Zhao, Bijun

AU - Ren, Zhiwei

AU - Li, Danwei

AU - Zhuo, Xiangjing

AU - Zhang, Jun

AU - Yi, Hanxiang

AU - Liu, Chao

AU - Fang, Fang

AU - Li, Shuti

PY - 2014/12/12

Y1 - 2014/12/12

N2 - Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

AB - Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

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U2 - 10.1039/c3cc47239f

DO - 10.1039/c3cc47239f

M3 - Journal article

AN - SCOPUS:84890355633

SN - 1359-7345

VL - 50

SP - 682

EP - 684

JO - Chemical Communications

JF - Chemical Communications

IS - 6

ER -

Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Abstract

ASJC Scopus subject areas

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