Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang, Shuti Li

    Research output: Journal article publicationJournal articleAcademic researchpeer-review

    25 Citations (Scopus)

    Abstract

    Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

    Original languageEnglish
    Pages (from-to)682-684
    Number of pages3
    JournalChemical Communications
    Volume50
    Issue number6
    DOIs
    Publication statusPublished - 12 Dec 2014

    ASJC Scopus subject areas

    • Catalysis
    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • General Chemistry
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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