Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Keyphrases

• Highly Nonlinear 100%
• Heterojunction 100%
• Molybdenite 100%
• Transition Metal Dichalcogenides 100%
• WSe2 100%
• Ultrathin MoS2 100%
• Nonlinear Memory 100%
• Memory Selector 100%
• Polystyrene Nanoplastics (PS-NPs) 100%
• High Current Density 66%
• Resistive Random Access Memory (ReRAM) 66%
• Monolithic 3D Integration 66%
• Low Temperature 33%
• Nonlinearity 33%
• Barrier Height 33%
• Current Density 33%
• Two-terminal 33%
• Schottky Barrier Height 33%
• Material-based 33%
• Specific Memory 33%
• Density Data 33%
• Data Storage 33%
• Punch-through 33%
• Hexagonal Boron Nitride (h-BN) 33%
• High Linearity 33%
• P-type 33%
• Transfer Method 33%
• Resistors 33%
• Leakage Current 33%
• Ultrathin 33%
• Low Temperature Process 33%
• Van Der Waals Interaction 33%
• Transport Behavior 33%
• Ultra-high Density 33%
• Au Electrode 33%
• Small Footprint 33%
• 2D Transition Metal Dichalcogenides 33%
• 2D Materials 33%
• Crossbar 33%
• Temperature Transfer 33%
• Crossbar Array 33%
• Fermi Level pinning 33%
• Memory Array 33%
• Memory Cell 33%
• Crossbar Memory 33%
• Selector Device 33%
• Read Margin 33%

Engineering

• Transition Metal Dichalcogenide 100%
• Heterojunctions 100%
• Molybdenum Disulfide 100%
• Low-Temperature 50%
• High Current Density 50%
• Barrier Height 50%
• Resistive Random Access Memory 50%
• Monolithic 3d Integration 50%
• Nonlinearity 50%
• Nitride 25%
• Schottky Barrier 25%
• Realization 25%
• 2D Material 25%
• Memory Array 25%
• Fermi Level 25%

Material Science

• Transition Metal Dichalcogenides 100%
• Heterojunction 100%
• Density 100%
• Resistive Random-Access Memory 50%
• Two-Dimensional Material 25%
• Schottky Barrier 25%
• Boron Nitride 25%