TY - JOUR
T1 - Highly (1 0 0)-orientated SnSe thin films deposited by pulsed-laser deposition
AU - Gong, Xiangnan
AU - Feng, Menglei
AU - Wu, Hong
AU - Zhou, Hongpeng
AU - Suen, Chunhung
AU - Zou, Hanjun
AU - Guo, Lijie
AU - Zhou, Kai
AU - Chen, Shijian
AU - Dai, Jiyan
AU - Wang, Guoyu
AU - Zhou, Xiaoyuan
N1 - Funding Information:
This work was financially supported in part by the National Natural Science Foundation of China (Grant Nos. 51772035 , 11604032 , 51472036 ), the Fundamental Research Funds for the Central Universities ( 106112017CDJQJ308821 ). The work conducted at the Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences is also supported by Key Research Program of Frontier Sciences, CAS , Grant No. QYZDB-SSWSLH016 . This work is sponsored by Natural Science Foundation of Chongqing, China , cstc2019jcyj-msxmX0554 , and the Starting Research Fund from the Chongqing University . Xiangnan Gong would like to thank Professor Yulong Liu ( Institute of Physics, Chinese Academy of Science ) for useful discussion of the results. Dr. Yang Zhou (Analytical and Testing Center) in Chongqing University for her helpful measurement in EPMA.
Funding Information:
This work was financially supported in part by the National Natural Science Foundation of China (Grant Nos. 51772035, 11604032, 51472036), the Fundamental Research Funds for the Central Universities (106112017CDJQJ308821). The work conducted at the Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences is also supported by Key Research Program of Frontier Sciences, CAS, Grant No. QYZDB-SSWSLH016. This work is sponsored by Natural Science Foundation of Chongqing, China, cstc2019jcyj-msxmX0554, and the Starting Research Fund from the Chongqing University. Xiangnan Gong would like to thank Professor Yulong Liu (Institute of Physics, Chinese Academy of Science) for useful discussion of the results. Dr. Yang Zhou (Analytical and Testing Center) in Chongqing University for her helpful measurement in EPMA.
Publisher Copyright:
© 2020
PY - 2021/1/1
Y1 - 2021/1/1
N2 - This work aims at improving the quality of the highly (1 0 0)-orientated SnSe thin films for thermoelectric applications. The as-deposited films were obtained by controlling the basic parameters including target-to-substrate distance, deposition time and growth temperature through pulsed-laser deposition. The films quality was further improved by vacuum thermal annealing. The microstructure and crystalline structure of the films were studied by X-ray photoelectron spectroscopy, X-ray diffraction, electron probe micro-analyzer, electron back-scatter diffraction, atomic force microscope and Raman spectroscopy. The SnSe thin films grown on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min show the best crystal quality and uniform orientation with mirror-like surface, and the corresponding Seebeck coefficient and power factor are about 383 μV/K and 15.4 μW/m⋅K2, respectively. Angle resolved polarized Raman spectroscopy proved that the surface of the SnSe films is the b-c plane with preferred (1 0 0) orientation crystalline over a large area, providing an important way to prepare thermoelectric thin film devices by pulse laser deposition.
AB - This work aims at improving the quality of the highly (1 0 0)-orientated SnSe thin films for thermoelectric applications. The as-deposited films were obtained by controlling the basic parameters including target-to-substrate distance, deposition time and growth temperature through pulsed-laser deposition. The films quality was further improved by vacuum thermal annealing. The microstructure and crystalline structure of the films were studied by X-ray photoelectron spectroscopy, X-ray diffraction, electron probe micro-analyzer, electron back-scatter diffraction, atomic force microscope and Raman spectroscopy. The SnSe thin films grown on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min show the best crystal quality and uniform orientation with mirror-like surface, and the corresponding Seebeck coefficient and power factor are about 383 μV/K and 15.4 μW/m⋅K2, respectively. Angle resolved polarized Raman spectroscopy proved that the surface of the SnSe films is the b-c plane with preferred (1 0 0) orientation crystalline over a large area, providing an important way to prepare thermoelectric thin film devices by pulse laser deposition.
KW - Angle-resolved polarized Raman spectra
KW - Pulsed laser deposition
KW - SnSe
KW - Thermal annealing
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=85090198942&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2020.147694
DO - 10.1016/j.apsusc.2020.147694
M3 - Journal article
AN - SCOPUS:85090198942
SN - 0169-4332
VL - 535
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 147694
ER -