Highly (1 0 0)-orientated SnSe thin films deposited by pulsed-laser deposition

Xiangnan Gong, Menglei Feng, Hong Wu, Hongpeng Zhou, Chunhung Suen, Hanjun Zou, Lijie Guo, Kai Zhou, Shijian Chen, Jiyan Dai, Guoyu Wang, Xiaoyuan Zhou

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)


This work aims at improving the quality of the highly (1 0 0)-orientated SnSe thin films for thermoelectric applications. The as-deposited films were obtained by controlling the basic parameters including target-to-substrate distance, deposition time and growth temperature through pulsed-laser deposition. The films quality was further improved by vacuum thermal annealing. The microstructure and crystalline structure of the films were studied by X-ray photoelectron spectroscopy, X-ray diffraction, electron probe micro-analyzer, electron back-scatter diffraction, atomic force microscope and Raman spectroscopy. The SnSe thin films grown on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min show the best crystal quality and uniform orientation with mirror-like surface, and the corresponding Seebeck coefficient and power factor are about 383 μV/K and 15.4 μW/m⋅K2, respectively. Angle resolved polarized Raman spectroscopy proved that the surface of the SnSe films is the b-c plane with preferred (1 0 0) orientation crystalline over a large area, providing an important way to prepare thermoelectric thin film devices by pulse laser deposition.

Original languageEnglish
Article number147694
JournalApplied Surface Science
Publication statusPublished - 1 Jan 2021


  • Angle-resolved polarized Raman spectra
  • Pulsed laser deposition
  • SnSe
  • Thermal annealing
  • Thin films

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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