High thermoelectric performance of ZrTe2/SrTiO3 heterostructure

Chun Hung Suen, Long Zhang, Kunyan Yang, Mingquan HE, Yisheng CHAI, Kai Zhou, Huichao Wang, Xiaoyuan Zhou, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


Achieving high thermoelectric performance in thin film heterostructures is essential for integrated and miniatured thermoelectric device applications. In this work, we demonstrate a mechanism and device performance of enhanced thermoelectric performance induced by interfacial effect in a transition metal dichalcogenides-SrTiO 3 (STO) heterostructure. Owing to the formed conductive interface and elevated conductivity, the ZrTe 2/STO heterostructure presents large thermoelectric power factor of 3.7 × 10 5 μWcm −1K −2 at 10 K. Formation of quasi-two-dimensional conductance at the interface is attributed for the large Seebeck coefficient and high electrical conductivity, leading to high thermoelectric performance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device.

Original languageEnglish
Pages (from-to)570-576
Number of pages7
JournalJournal of Materiomics
Issue number3
Publication statusPublished - May 2022


  • High mobility
  • Interface
  • Thermoelectric
  • Transition metal dichalcogenides
  • ZrTe thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Metals and Alloys


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