High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

Zhongnan Xi; Qiao Jin; Chunyan Zheng; Yongcheng Zhang; Chaojing Lu; Qiang Li; Shandong Li; Jiyan Dai; Zheng Wen

doi:10.1063/1.4999270

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

Zhongnan Xi, Qiao Jin, Chunyan Zheng, Yongcheng Zhang, Chaojing Lu, Qiang Li, Shandong Li, Jiyan Dai, Zheng Wen

Research output: Journal article publication › Journal article › Academic research › peer-review

13 Citations (Scopus)

Abstract

Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3device exhibits a giant ROFF/RONresistance ratio of ∼3 × 105at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ∼0.93 eV and room-temperature retention time of ∼70 years can be extracted.

Original language	English
Article number	132905
Journal	Applied Physics Letters
Volume	111
Issue number	13
DOIs	https://doi.org/10.1063/1.4999270
Publication status	Published - 25 Sept 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4999270

http://hdl.handle.net/10397/74732

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title = "High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions",

abstract = "Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3device exhibits a giant ROFF/RONresistance ratio of ∼3 × 105at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ∼0.93 eV and room-temperature retention time of ∼70 years can be extracted.",

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T1 - High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

AU - Xi, Zhongnan

AU - Jin, Qiao

AU - Zheng, Chunyan

AU - Zhang, Yongcheng

AU - Lu, Chaojing

AU - Li, Qiang

AU - Li, Shandong

AU - Dai, Jiyan

AU - Wen, Zheng

PY - 2017/9/25

Y1 - 2017/9/25

N2 - Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3device exhibits a giant ROFF/RONresistance ratio of ∼3 × 105at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ∼0.93 eV and room-temperature retention time of ∼70 years can be extracted.

AB - Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3device exhibits a giant ROFF/RONresistance ratio of ∼3 × 105at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ∼0.93 eV and room-temperature retention time of ∼70 years can be extracted.

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U2 - 10.1063/1.4999270

DO - 10.1063/1.4999270

M3 - Journal article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132905

ER -

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

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