High temperature excitonic lasing characteristics of randomly assembled SnO2nanowires

H. Y. Yang; Siu Fung Yu; S. H. Tsang; T. P. Chen; J. Gao; T. Wu

doi:10.1063/1.3240867

High temperature excitonic lasing characteristics of randomly assembled SnO₂nanowires

H. Y. Yang, Siu Fung Yu, S. H. Tsang, T. P. Chen, J. Gao, T. Wu

Research output: Journal article publication › Journal article › Academic research › peer-review

15 Citations (Scopus)

Abstract

The lasing characteristics of randomly assembled SnO2nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2with the increase of temperature.

Original language	English
Article number	131106
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3240867
Publication status	Published - 12 Oct 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3240867

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AU - Yu, Siu Fung

AU - Tsang, S. H.

AU - Chen, T. P.

AU - Gao, J.

AU - Wu, T.

PY - 2009/10/12

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AB - The lasing characteristics of randomly assembled SnO2nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2with the increase of temperature.

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ER -

High temperature excitonic lasing characteristics of randomly assembled SnO₂nanowires

Abstract

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