High temperature excitonic lasing characteristics of randomly assembled SnO2nanowires

H. Y. Yang, Siu Fung Yu, S. H. Tsang, T. P. Chen, J. Gao, T. Wu

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The lasing characteristics of randomly assembled SnO2nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2with the increase of temperature.
Original languageEnglish
Article number131106
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 12 Oct 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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