High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure

Sheung Mei Ng, Huichao Wang, Yukuai Liu, Hon Fai Wong, Hei Man Yau, Chun Hung Suen, Ze Han Wu, Chi Wah Leung, Ji Yan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)


Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO2 and amorphous YIG layers is actually observed between ZrTe2 and YIG. The magnetization of interfacial reaction-induced ZrO2 and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe2. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.

Original languageEnglish
Pages (from-to)7077-7084
Number of pages8
JournalACS Nano
Issue number6
Publication statusPublished - 23 Jun 2020


  • anomalous Hall effect
  • heterostructure interface
  • proximity effect
  • transition metal dichalcogenides
  • zirconium ditelluride

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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