TY - JOUR
T1 - High-Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
AU - Chen, Guanyu
AU - Yu, Yu
AU - Shi, Yang
AU - Li, Nanxi
AU - Luo, Wei
AU - Cao, Lin
AU - Danner, Aaron J.
AU - Liu, Ai Qun
AU - Zhang, Xinliang
N1 - Funding Information:
This work was supported in part by the National Key Research and Development Program of China under Grant No. 2019YFB2203502, in part by the National Natural Science Foundation of China under Grant Nos. 62135004, 61922034, and 61775073. This work was also supported by the National Research Foundation, Singapore, under its Competitive Research Programme (CRP Award No. NRF‐CRP24‐2020‐0003). N.L. acknowledges support from the A*STAR (Agency for Science, Technology and Research), Singapore, under the RIE2020 Advanced Manufacturing and Engineering (AME) IAF‐PP Grant, No. A19B3a0008. W.L., L.C., and A.L. are supported by the Singapore Ministry of Education (MOE) Tier 3 grant (MOE2017‐T3‐1‐001), NRF grant (MOH‐000926), A*STAR research grant (SERC‐A18A5b0056), and PUB Singapore's National Water Agency grant (PUB‐1804‐0082).
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/12
Y1 - 2022/12
N2 - A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III–V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.
AB - A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III–V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.
KW - integrated photonics
KW - optical interconnects
KW - optoelectronics
KW - photodetector
KW - radio frequency photonics
UR - http://www.scopus.com/inward/record.url?scp=85140096500&partnerID=8YFLogxK
U2 - 10.1002/lpor.202200117
DO - 10.1002/lpor.202200117
M3 - Review article
AN - SCOPUS:85140096500
SN - 1863-8880
VL - 16
JO - Laser and Photonics Reviews
JF - Laser and Photonics Reviews
IS - 12
M1 - 2200117
ER -