The two-dimensional layered semiconducting tungsten disulfide (WS 2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS 2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS 2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10 11 Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS 2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.
ASJC Scopus subject areas