High resistance via induced by marginal barrier metal step coverage and F diffusion

Jiyan Dai, S. K. Loh, S. F. Tee, C. L. Tay, S. Ansari, E. Er, S. Redkar

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

11 Citations (Scopus)

Abstract

Failure analysis was carried out on high resistance via in 0.35 μm process. TEM study of high resistant W via revealed that the failure is due to the F diffusion through barrier metal layer of Ti/TiN.
Original languageEnglish
Title of host publicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages183-186
Number of pages4
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore
Duration: 9 Jul 200113 Jul 2001

Conference

Conference8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
Country/TerritorySingapore
CitySingapure
Period9/07/0113/07/01

ASJC Scopus subject areas

  • Engineering(all)

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