High resistance via induced by marginal barrier metal step coverage and F diffusion

Jiyan Dai; S. K. Loh; S. F. Tee; C. L. Tay; S. Ansari; E. Er; S. Redkar

High resistance via induced by marginal barrier metal step coverage and F diffusion

Jiyan Dai, S. K. Loh, S. F. Tee, C. L. Tay, S. Ansari, E. Er, S. Redkar

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

12 Citations (Scopus)

Abstract

Failure analysis was carried out on high resistance via in 0.35 μm process. TEM study of high resistant W via revealed that the failure is due to the F diffusion through barrier metal layer of Ti/TiN.

Original language	English
Title of host publication	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages	183-186
Number of pages	4
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore Duration: 9 Jul 2001 → 13 Jul 2001

Conference

Conference	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
Country/Territory	Singapore
City	Singapure
Period	9/07/01 → 13/07/01

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{86faf7607bfc4bfabf873aa66fc31f9f,

title = "High resistance via induced by marginal barrier metal step coverage and F diffusion",

abstract = "Failure analysis was carried out on high resistance via in 0.35 μm process. TEM study of high resistant W via revealed that the failure is due to the F diffusion through barrier metal layer of Ti/TiN.",

author = "Jiyan Dai and Loh, {S. K.} and Tee, {S. F.} and Tay, {C. L.} and S. Ansari and E. Er and S. Redkar",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "183--186",

booktitle = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) ; Conference date: 09-07-2001 Through 13-07-2001",

}

Dai, J, Loh, SK, Tee, SF, Tay, CL, Ansari, S, Er, E & Redkar, S 2001, High resistance via induced by marginal barrier metal step coverage and F diffusion. in Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. pp. 183-186, 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001), Singapure, Singapore, 9/07/01.

High resistance via induced by marginal barrier metal step coverage and F diffusion. / Dai, Jiyan; Loh, S. K.; Tee, S. F. et al.
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2001. p. 183-186.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - High resistance via induced by marginal barrier metal step coverage and F diffusion

AU - Dai, Jiyan

AU - Loh, S. K.

AU - Tee, S. F.

AU - Tay, C. L.

AU - Ansari, S.

AU - Er, E.

AU - Redkar, S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Failure analysis was carried out on high resistance via in 0.35 μm process. TEM study of high resistant W via revealed that the failure is due to the F diffusion through barrier metal layer of Ti/TiN.

AB - Failure analysis was carried out on high resistance via in 0.35 μm process. TEM study of high resistant W via revealed that the failure is due to the F diffusion through barrier metal layer of Ti/TiN.

UR - http://www.scopus.com/inward/record.url?scp=0034818267&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 183

EP - 186

BT - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

T2 - 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)

Y2 - 9 July 2001 through 13 July 2001

ER -

High resistance via induced by marginal barrier metal step coverage and F diffusion

Abstract

Conference

ASJC Scopus subject areas

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