High quality SnS van der Waals epitaxies on graphene buffer layer

Keyphrases

• Absorption Coefficient 33%
• Band Gap 33%
• Buffer Layer 33%
• Crystallinity 33%
• Crystallite Size 33%
• Dangling Bonds 33%
• Direct Band Gap 33%
• Dislocation 33%
• Epitaxis 100%
• GaAs(100) 33%
• Graphene 66%
• Graphene Buffer Layer 100%
• Graphene Interface 33%
• Growth Techniques 33%
• Hole Mobility 33%
• Indirect Band Gap 33%
• Layered Structure 33%
• Localized States 33%
• Molecular Beam Epitaxy 33%
• Physical Properties 33%
• Rocking Curve 33%
• Sharp Cutoff 33%
• SnO2 Thin Films 66%
• SnS Films 66%
• Structural Defects 33%
• Van Der Waals 100%
• VdW Force 33%

Material Science

• Buffer Layer 100%
• Crystallite Size 16%
• Film 66%
• Gallium Arsenide 16%
• Graphene 100%
• Hole Mobility 16%
• Molecular Beam Epitaxy 16%
• Physical Property 16%
• Thin Films 33%