High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

A. Ruotolo; C. Y. Lam; W. F. Cheng; K. H. Wong; Chi Wah Leung

doi:10.1103/PhysRevB.76.075122

High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

A. Ruotolo, C. Y. Lam, W. F. Cheng, K. H. Wong, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

59 Citations (Scopus)

Abstract

We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics.

Original language	English
Article number	075122
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	76
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.76.075122
Publication status	Published - 21 Aug 2007

ASJC Scopus subject areas

Condensed Matter Physics

More information

10.1103/PhysRevB.76.075122

http://hdl.handle.net/10397/4788

Cite this

@article{a5bf8f40f6a24222acd1f5aca0fc61c0,

title = "High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates",

abstract = "We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics.",

author = "A. Ruotolo and Lam, \{C. Y.\} and Cheng, \{W. F.\} and Wong, \{K. H.\} and Leung, \{Chi Wah\}",

year = "2007",

month = aug,

day = "21",

doi = "10.1103/PhysRevB.76.075122",

language = "English",

volume = "76",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "7",

}

TY - JOUR

T1 - High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

AU - Ruotolo, A.

AU - Lam, C. Y.

AU - Cheng, W. F.

AU - Wong, K. H.

AU - Leung, Chi Wah

PY - 2007/8/21

Y1 - 2007/8/21

N2 - We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics.

AB - We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics.

UR - https://www.scopus.com/pages/publications/34548156797

U2 - 10.1103/PhysRevB.76.075122

DO - 10.1103/PhysRevB.76.075122

M3 - Journal article

SN - 1098-0121

VL - 76

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

M1 - 075122

ER -

High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this