High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

A. Ruotolo; C. Y. Lam; W. F. Cheng; K. H. Wong; Chi Wah Leung

doi:10.1103/PhysRevB.76.075122

High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

A. Ruotolo, C. Y. Lam, W. F. Cheng, K. H. Wong, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

53 Citations (Scopus)

Abstract

We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics.

Original language	English
Article number	075122
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	76
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.76.075122
Publication status	Published - 21 Aug 2007

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.76.075122

http://hdl.handle.net/10397/4788

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AU - Wong, K. H.

AU - Leung, Chi Wah

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AB - We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics.

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High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

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