High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Xiao Huo, Kevin J. Chen, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

8 Citations (Scopus)

Abstract

High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.
Original languageEnglish
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Pages403-406
Number of pages4
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: 2 Jun 20024 Jun 2002

Conference

Conference2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/TerritoryUnited States
CitySeatle, WA
Period2/06/024/06/02

ASJC Scopus subject areas

  • Engineering(all)

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