Abstract
High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.
Original language | English |
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Title of host publication | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers |
Pages | 403-406 |
Number of pages | 4 |
Publication status | Published - 1 Jan 2002 |
Externally published | Yes |
Event | 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: 2 Jun 2002 → 4 Jun 2002 |
Conference
Conference | 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium |
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Country/Territory | United States |
City | Seatle, WA |
Period | 2/06/02 → 4/06/02 |
ASJC Scopus subject areas
- Engineering(all)