High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Xiao Huo; Kevin J. Chen; Philip Ching Ho Chan

High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Xiao Huo, Kevin J. Chen, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

8 Citations (Scopus)

Abstract

High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.

Original language	English
Title of host publication	IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Pages	403-406
Number of pages	4
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: 2 Jun 2002 → 4 Jun 2002

Conference

Conference	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Seatle, WA
Period	2/06/02 → 4/06/02

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer",

abstract = "High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.",

author = "Xiao Huo and Chen, {Kevin J.} and Chan, {Philip Ching Ho}",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "403--406",

booktitle = "IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers",

note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

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High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer. / Huo, Xiao; Chen, Kevin J.; Chan, Philip Ching Ho.

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 403-406.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

AU - Huo, Xiao

AU - Chen, Kevin J.

AU - Chan, Philip Ching Ho

PY - 2002/1/1

Y1 - 2002/1/1

N2 - High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.

AB - High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.

UR - http://www.scopus.com/inward/record.url?scp=0036317309&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 403

EP - 406

BT - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

ER -

High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Abstract

Conference

ASJC Scopus subject areas

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