High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Xiao Huo; Kevin J. Chen; Philip Ching Ho Chan

High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Xiao Huo, Kevin J. Chen, Philip Ching Ho Chan

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal Ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.

Original language	English
Pages (from-to)	513-516
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: 2 Jun 2002 → 7 Jun 2002

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer",

abstract = "High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal Ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.",

author = "Xiao Huo and Chen, {Kevin J.} and Chan, {Philip Ching Ho}",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "1",

pages = "513--516",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "IEEE",

note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

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TY - JOUR

T1 - High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

AU - Huo, Xiao

AU - Chen, Kevin J.

AU - Chan, Philip Ching Ho

PY - 2002/1/1

Y1 - 2002/1/1

N2 - High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal Ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.

AB - High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal Ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.

UR - http://www.scopus.com/inward/record.url?scp=0036073649&partnerID=8YFLogxK

M3 - Conference article

SN - 0149-645X

VL - 1

SP - 513

EP - 516

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Abstract

ASJC Scopus subject areas

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