High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

Xiao Huo, Kevin J. Chen, Philip Ching Ho Chan

Research output: Journal article publicationConference articleAcademic researchpeer-review

8 Citations (Scopus)

Abstract

High-Q Cu inductors using low-k BENZOCYCLOBUTENE (BCB) dielectric as an interface layer have been fabricated on standard CMOS-grade silicon substrate. Metal Ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. Quality-factor as high as 25 was obtained for a 1-nH inductor at 2 GHz. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFIC's and MMIC's.
Original languageEnglish
Pages (from-to)513-516
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: 2 Jun 20027 Jun 2002

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this