High precision current memory cell for second generation switched-current circuits

X. Zeng, Chi Kong Tse, P. S. Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

In second-generation switched-current circuits, the effects of charge injection (or clock-feedthrough) and channel length modulation are the two major sources which seriously limit the accuracy of the basic current memroy cell. In this paper, a new technique which can completely cancell the charge-injection error is proposed. Using this technique and the cascode structure, a high precision memory cell is constructed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration.
Original languageEnglish
Pages (from-to)98-100
Number of pages3
JournalChinese Journal of Electronics
Volume6
Issue number3
Publication statusPublished - 1 Dec 1997

Keywords

  • Channel-lengh modulation
  • Charge-injection cancellation
  • Clock-feedthrough cancellation
  • Second-generation SI circuits
  • Switched-current circuits

ASJC Scopus subject areas

  • Applied Mathematics
  • Electrical and Electronic Engineering

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