Abstract
Distributed feedback (DFB) and Fabry-Perot (FP) semiconductor lasers with step and periodic interdiffusion quantum-well structures are proposed for high-power single-longitudinal-mode operation. It is shown that the phase-adjustment region formed by the diffusion step (i.e., step change in optical gain and refractive index) counteracts the influence of spatial hole burning, especially for DFB lasers with large coupling-length products biased at high injection current. Forthermore. it is found that with careful design of the diffusion grating (i.e., grating period and amount of diffusion extent) of FP lasers, side-mode suppression ratio can be enhanced and threshold current density can be minimized to a satisfied level.
Original language | English |
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Pages (from-to) | 999-1008 |
Number of pages | 10 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 33 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jun 1997 |
Externally published | Yes |
Keywords
- Annealing
- Diffusion processes
- Distributed feedback lasers
- Fabry-Perot resonators
- Laser modes
- Quantum wells
- Semiconductor device modeling
- Semiconductor lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering