High-power angled broad-area 1.3-?m laser diodes with good beam quality

C.-H. Tsai; Y.-S. Su; C.-W. Tsai; Din-ping Tsai; C.-F. Lin

doi:10.1109/LPT.2004.834890

High-power angled broad-area 1.3-?m laser diodes with good beam quality

C.-H. Tsai
, Y.-S. Su
, C.-W. Tsai
, Din-ping Tsai
, C.-F. Lin

Research output: Journal article publication › Journal article › Academic research › peer-review

22 Citations (Scopus)

Abstract

A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7° from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25° away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A. © 2004 IEEE.

Original language	English
Pages (from-to)	2412-2414
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2004.834890
Publication status	Published - 1 Nov 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.834890

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abstract = "A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7° from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25° away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A. {\textcopyright} 2004 IEEE.",

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AU - Tsai, C.-W.

AU - Tsai, Din-ping

AU - Lin, C.-F.

PY - 2004/11/1

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AB - A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7° from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25° away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A. © 2004 IEEE.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

High-power angled broad-area 1.3-?m laser diodes with good beam quality

Abstract

ASJC Scopus subject areas

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