High-power angled broad-area 1.3-?m laser diodes with good beam quality

C.-H. Tsai, Y.-S. Su, C.-W. Tsai, Din-ping Tsai, C.-F. Lin

Research output: Journal article publicationJournal articleAcademic researchpeer-review

18 Citations (Scopus)

Abstract

A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7° from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25° away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A. © 2004 IEEE.
Original languageEnglish
Pages (from-to)2412-2414
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number11
DOIs
Publication statusPublished - 1 Nov 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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