High performance thin-film lithium niobate modulator on a silicon substrate using periodic capacitively loaded traveling-wave electrode

Gengxin Chen, Kaixuan Chen, Ranfeng Gan, Ziliang Ruan, Zong Wang, Pucheng Huang, Chao Lu, Alan Pak Tao Lau, Daoxin Dai, Changjian Guo, Liu Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

Thin-film lithium niobate (TFLN) based traveling-wave modulators maintain simultaneously excellent performances, including large modulation bandwidth, high extinction ratio, low optical loss, and high modulation efficiency. Nevertheless, there still exists a balance between the driving voltage and modulation bandwidth. Here, we demonstrate an ultra-large bandwidth electro-optic modulator without compromising the driving voltage based on the TFLN platform on a silicon substrate, using a periodic capacitively loaded traveling-wave electrode. In order to compensate the slow-wave effect, an undercut etching technique for the silicon substrate is introduced to decrease the microwave refractive index. Our demonstrated devices represent both low optical and low microwave losses, which leads to a negligible optical insertion loss of 0.2 dB and a large electro-optic bandwidth with a roll-off of 1.4 dB at 67 GHz for a 10 mm-long device. A low half-wave voltage of 2.2 V is also achieved. Data rates up to 112 Gb s-1 with PAM-4 modulation are demonstrated. The compatibility of the proposed modulator to silicon photonics facilitates its integration with matured silicon photonic components using, e.g., hybrid integration technologies.

Original languageEnglish
Article number026103
Pages (from-to)1-9
Number of pages9
JournalAPL Photonics
Volume7
Issue number2
DOIs
Publication statusPublished - 1 Feb 2022

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

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